2006. 2. 23 1/5 semiconductor technical data KMA6D5P20Q p-ch trench mosfet revision no : 2 general description battery packs and battery-powered portable equipment applications. it?s mainly suitable for use as a load switch in battery powered applications and protection in battery packs. features v dss =-20v, i d =-6.5a. drain-source on resistance. : r ds(on) =35m (max.) @ v gs =-4.5v. : r ds(on) =60m (max.) @ v gs =-2.5v. maximum rating (ta=25 ) flp-8 b g h b1 0.254 p t 1.27 bsc millimeters b1 g h l d a b dim 4.9 0.1 + _ 3.9 0.1 + _ 0.445 0.065 + _ 6.0 0.2 + _ 1.55 0.2 + _ 0.175 0.075 + _ 0.715 0.215 + _ 1 4 5 8 a p d l t * : surface mounted on 1 1 board, t 10sec. 1 2 3 4 8 7 6 5 s s s g d d d d pin connection (top view) g sss d ddd characteristic symbol rating unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current dc i d * -6.5 a pulsed (note2) i dp -32 drain power dissipation ta=25 p d * 2.5 w ta=100 1.0 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja * 50 /w
2006. 2. 23 2/5 KMA6D5P20Q revision no : 2 electrical characteristics (ta=25 ) note 1) based on thermal dissipation from junction to ambient while mounted on a 1 1 pcb board. note 2) pulse test : pulse width 300 . note 3) guaranteed by design, not subject to production testing. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =-250 a, v gs =0v, -20 - - v drain cut-off current i dss v ds =-20v, v gs =0v, - - -1 a gate threshold voltage v th v ds =v gs , i d =-250 a -0.6 - - v gate leakage current i gss v gs = 12v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =-4.5v, i d =-6.5a (note 2) - 27 35 m v gs =-2.5v, i d =-5.0a (note 2) - 46 60 dynamic (note 3) total gate charge q g v ds =-10v, i d =-6.5a v gs =-4.5v (fig.1) - 13.6 - nc gate-source charge q gs - 2.3 - gate-drain charge q gd - 5.5 - turn-on delay time t d(on) v dd =-10v, r l =1.5 , r g =6 (fig.2) - 10 - ns turn-on rise time t r - 35 - turn-off delay time t d(off) - 38 - turn-off fall time t f - 50 - source-drain diode ratings continuous source current i s v gs < v th (note 1) - - -1.7 a diode forward voltage v sd i s =-6.5a, v gs =0v (note 2) - - -1.5 v
2006. 2. 23 3/5 KMA6D5P20Q revision no : 2 gate - source voltage v gs (v) 0 - 16 - 24 - 8 - 32 0 - 1 - 5 - 3 - 2 - 4 i d - v gs v th - t j - 75 - 50 - 25 - 0.3 - 0.1 - 0.2 0 0.5 0.4 0.1 0.2 0.3 050 25 100 150 75 125 drain current i d (a) tj=125 c tj= -55 c tj=25 c normalized threshold voltage v th junction temperature t j ( ) c i d = - 250 a i d - v ds drain - source voltage v ds (v) 0 0 - 32 - 24 - 16 - 8 - 1 - 4 - 3 - 2 drain current i d (a) v gs = - 1.5 v - 2v - 3v - 4v - 5v - 4.5v - 2.5v - 3.5v r ds(on) - i d r ds(on) - t j i s - v sd - 0 - 1 - 10 - 0.1 - 100 - 0.2 - 0.6 - 1 - 1.2 - 0.8 - 0.4 0 0 10 40 30 50 20 60 0 - 2 - 12 - 10 - 4 - 8 - 6 25 -25 50 -75 -50 100 150 125 75 v gs = - 2.5v v gs = - 4.5v 1.4 0.6 0.7 0.8 1.0 1.2 1.3 0.9 1.1 drain current i d (a) on - resistance r ds(on) (m ? ) reverse drain current i s (a) junction temperture t j ( ) normalized on resistance source - drain voltage v sd (v) c tj=25 c tj=150 c t a =25 c v gs = - 4.5v i ds = - 6.5a
2006. 2. 23 4/5 KMA6D5P20Q revision no : 2 gate - charge q g (nc) c - v ds drain - source voltage v ds (v) 0 - 5 - 3 - 1 - 2 - 4 15 12 9 3 6 0 q g - v gs capacitance (pf) gate - source voltage v gs (v) 0 1200 1600 2000 800 400 c oss c iss c rss frequency = 1mhz - 10 0 - 5 - 20 - 15 v ds = - 10a i ds = - 6.5a square wave pulse duration (sec) 10 10 2 10 -3 10 -2 10 -1 110 3 10 -4 si ng le pul se 0. 05 0.1 0.2 0.0 2 - duty factor, d= t 1 /t 2 t j(max) - t a - r thja = p d t 1 t 2 p dm r th normalized transient thermal resistance du ty=0 .5 0.1 0.01 1
2006. 2. 23 5/5 KMA6D5P20Q revision no : 2 fig. 1 gate charge v gs - 4.5 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig. 2 resistive load switching v gs v ds v gs 1.0 ma schottky diode - 4.5 v 6 ? r l 0.5 v dss 0.5 v dss v ds
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